Micron Technology DRAM SDRAMMobile-, Part #: MT46H64M32LFBQ-48 WT:C | Dynamic random access memory | DEX Schurter Output Phases: 1

Output Phases: 1

128K refresh command must be issued in total each 32ms) • HSTL I/O (1

ANALOG_OUTPUT_CARD

5 kV 4-channel digital isolator

Micron Technology DRAM SDRAMMobile-, Part #: MT46H64M32LFBQ-48 WT:C | Dynamic random access memory | DEX Schurter Output Phases: 1Micron Technology DRAM SDRAMMobile , Part #: MT46H64M32LFBQ 48 WT: C features: VDD VDDQ = 1. 701. 95V Bidirectional data strobe per byte of data (DQS) Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle Differential clock inputs (CK and CK#) Commands entered on each positive CK edge DQS edge aligned with data for READs; centeraligned with data for WRITEs 4 internal banks for concurrent operation Data masks (DM)